Physics of semiconductor devices (Delhi, 16-20 September 1997)Kumar, Vikram; Agarwal, S.K.SPIE proceedings series. 1998, isbn 0-8194-2756-X, 2Vol, XXVIII, 1322, CA-8 p, isbn 0-8194-2756-XConference Proceedings

Modelling of MESFET by two region modelPANDEY, A. K; SHUKLA, S. R; VYAS, H. P et al.SPIE proceedings series. 1998, pp 929-932, isbn 0-8194-2756-X, 2VolConference Paper

Advances in strained layers and strained-layer devicesVAN HOOF, C; GENOE, J; NEMETH, S et al.SPIE proceedings series. 1998, pp 554-562, isbn 0-8194-2756-X, 2VolConference Paper

Design and optimization of GaAs 1:8 time division demultiplexerHARSH; GUPTA, S; MISHRA, M et al.SPIE proceedings series. 1998, pp 914-917, isbn 0-8194-2756-X, 2VolConference Paper

Distribution of zinc in CdZnTe crystalsRADHAKRISHNAN, J. K; RAMAN, R; NARULA, R. C et al.SPIE proceedings series. 1998, pp 818-821, isbn 0-8194-2756-X, 2VolConference Paper

Electron transport in indium doped AlSb filmsSINGH, T; BEDI, R. K.SPIE proceedings series. 1998, pp 365-368, isbn 0-8194-2756-X, 2VolConference Paper

Estimation of carbon in undoped Si GaAs by SIMS and ERDAKUMAR, R; NATH, R; DHAUL, A et al.SPIE proceedings series. 1998, pp 329-332, isbn 0-8194-2756-X, 2VolConference Paper

Failure analysis of microelectronic devices for space applicationsKRISHNARAJU, V; VENKATESH, K; RAVINDRA, M et al.SPIE proceedings series. 1998, pp 1018-1021, isbn 0-8194-2756-X, 2VolConference Paper

GaSb based PV cells with Zn-diffused emittersANDREEV, V. M; KHVOSTIKOV, V. P; SOROKINA, S. V et al.SPIE proceedings series. 1998, pp 420-423, isbn 0-8194-2756-X, 2VolConference Paper

Growth and defects in cadmium telluride and related alloysGURUMURTHY, S; BHAT, H. L; SUNDERSHESHU, B. S et al.SPIE proceedings series. 1998, pp 738-745, isbn 0-8194-2756-X, 2VolConference Paper

IV characteristics of a Generalized DC model for GaAs OPFETLOHANI, R. B; PAL, B. B.SPIE proceedings series. 1998, pp 918-920, isbn 0-8194-2756-X, 2VolConference Paper

Nanocrystalline wide band gap nitrides for electronicsSZMIDT, J; WERBOWY, A; JAKUBOWSKI, A et al.SPIE proceedings series. 1998, pp 102-105, isbn 0-8194-2756-X, 2VolConference Paper

Optical nonlinearities in semiconductor quantum structuresRUSTAGI, K. C.SPIE proceedings series. 1998, pp 63-68, isbn 0-8194-2756-X, 2VolConference Paper

Optimization of CCD fabrication process for space applicationASIAM, S; DAS, N. C; JHABVALA, M et al.SPIE proceedings series. 1998, pp 588-591, isbn 0-8194-2756-X, 2VolConference Paper

Passivation of electronic centres in silicon by hydrogenAMMERLAAN, C. A. J; ZEVENBERGEN, I. S; GREGORKIEWICZ, T et al.SPIE proceedings series. 1998, pp 531-538, isbn 0-8194-2756-X, 2VolConference Paper

Physics of electrovoltaic and electrophotovoltaic cellsSINGH, S. N.SPIE proceedings series. 1998, pp 450-453, isbn 0-8194-2756-X, 2VolConference Paper

Radiation-induced degradation of bipolar transistorsTOPKAR, A; MATHEW, T; LAL, R et al.SPIE proceedings series. 1998, pp 686-689, isbn 0-8194-2756-X, 2VolConference Paper

Study of interaction of γ-radiation with MCT epitaxial layersSITHARAMAN, S; GAUTAM, M; GANGULY, S. K et al.SPIE proceedings series. 1998, pp 837-839, isbn 0-8194-2756-X, 2VolConference Paper

Switching characteristics of a modulation-doped field effect transistorSEN, S; PANDEY, M. K; GUPTA, R. S et al.SPIE proceedings series. 1998, pp 937-940, isbn 0-8194-2756-X, 2VolConference Paper

Validity of Miller's approximation in advanced bipolar transistors with reach-through collectorsJAGADESH KUMAR, M; DATTA, K.SPIE proceedings series. 1998, pp 1022-1025, isbn 0-8194-2756-X, 2VolConference Paper

Low dose radiation sensor for medical therapy applicationsANIL, K. G; VASI, J; LAL, R et al.SPIE proceedings series. 1998, pp 1145-1148, isbn 0-8194-2756-X, 2VolConference Paper

Characterization of epitaxial ZnSe films grown by pulsed laser depositionGANGULI, T; INGALE, A; VEDVYAS, M et al.SPIE proceedings series. 1998, pp 1181-1184, isbn 0-8194-2756-X, 2VolConference Paper

Contribution from the tapered area to the contact resistance of photoconductive linear arraysDHAR, V; ASHOKAN, R; BHAN, R. K et al.SPIE proceedings series. 1998, pp 782-785, isbn 0-8194-2756-X, 2VolConference Paper

GaN based microwave power HEMTsMISHRA, U. K; WU, Y.-F; KELLER, B. P et al.SPIE proceedings series. 1998, pp 878-883, isbn 0-8194-2756-X, 2VolConference Paper

GaN growth by plasma assisted reactive evaporationSINHA, R. S; PAL, S; SHARMA, S. P et al.SPIE proceedings series. 1998, pp 356-359, isbn 0-8194-2756-X, 2VolConference Paper